Chin. Phys. B
中国物理B  2016, Vol. 25 Issue (4): 048503    DOI: 10.1088/1674-1056/25/4/048503
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse
Xiao-Wen Xi(席晓文), Chang-Chun Chai(柴常春), Gang Zhao(赵刚), Yin-Tang Yang(杨银堂), Xin-Hai Yu(于新海), Yang Liu(刘阳)
1 Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 701107, China;
2 Complicated Electromagnetic Environment Laboratory of China Academy of Engineering Physics, Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900, China
Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse
Xiao-Wen Xi(席晓文)1, Chang-Chun Chai(柴常春)1, Gang Zhao(赵刚)2, Yin-Tang Yang(杨银堂)1, Xin-Hai Yu(于新海)1, Yang Liu(刘阳)1
1 Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 701107, China;
2 Complicated Electromagnetic Environment Laboratory of China Academy of Engineering Physics, Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900, China

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