Chin. Phys. B
中国物理B  2016, Vol. 25 Issue (4): 048105    DOI: 10.1088/1674-1056/25/4/048105
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
Aluminum incorporation efficiencies in A-and C-plane AlGaN grown by MOVPE
Dong-Yue Han(韩东岳), Hui-Jie Li(李辉杰), Gui-Juan Zhao(赵桂娟), Hong-Yuan Wei(魏鸿源), Shao-Yan Yang(杨少延), Lian-Shan Wang(汪连山)
Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Aluminum incorporation efficiencies in A-and C-plane AlGaN grown by MOVPE
Dong-Yue Han(韩东岳), Hui-Jie Li(李辉杰), Gui-Juan Zhao(赵桂娟), Hong-Yuan Wei(魏鸿源), Shao-Yan Yang(杨少延), Lian-Shan Wang(汪连山)
Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

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