Chin. Phys. B
中国物理B  2016, Vol. 25 Issue (4): 047305    DOI: 10.1088/1674-1056/25/4/047305
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
An analytical model for nanowire junctionless SOI FinFETs with considering three-dimensional coupling effect
Fan-Yu Liu(刘凡宇), Heng-Zhu Liu(刘衡竹), Bi-Wei Liu(刘必慰), Yu-Feng Guo(郭宇峰)
1 School of Computer, National University of Defense Technology, Changsha 410073, China;
2 Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 201131, China
An analytical model for nanowire junctionless SOI FinFETs with considering three-dimensional coupling effect
Fan-Yu Liu(刘凡宇)1, Heng-Zhu Liu(刘衡竹)1, Bi-Wei Liu(刘必慰)1, Yu-Feng Guo(郭宇峰)2
1 School of Computer, National University of Defense Technology, Changsha 410073, China;
2 Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 201131, China

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