Chin. Phys. B
中国物理B  2016, Vol. 25 Issue (4): 047102    DOI: 10.1088/1674-1056/25/4/047102
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Fabrications and characterizations of high performance 1.2 kV, 3.3 kV, and 5.0 kV class 4H-SiC power SBDs
Qing-Wen Song(宋庆文), Xiao-Yan Tang(汤晓燕), Hao Yuan(袁昊), Yue-Hu Wang(王悦湖), Yi-Meng Zhang(张艺蒙), Hui Guo(郭辉), Ren-Xu Jia(贾仁需), Hong-Liang Lv(吕红亮), Yi-Men Zhang(张义门), Yu-Ming Zhang(张玉明)
1 School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
2 Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
Fabrications and characterizations of high performance 1.2 kV, 3.3 kV, and 5.0 kV class 4H-SiC power SBDs
Qing-Wen Song(宋庆文)1,2, Xiao-Yan Tang(汤晓燕)2, Hao Yuan(袁昊)2, Yue-Hu Wang(王悦湖)2, Yi-Meng Zhang(张艺蒙)2, Hui Guo(郭辉)2, Ren-Xu Jia(贾仁需)2, Hong-Liang Lv(吕红亮)2, Yi-Men Zhang(张义门)2, Yu-Ming Zhang(张玉明)2
1 School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
2 Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China

Copyright © the Chinese Physical Society
Address:Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn