Chin. Phys. B
中国物理B  2016, Vol. 25 Issue (3): 038501    DOI: 10.1088/1674-1056/25/3/038501
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
Effect of lateral structure parameters of SiGe HBTs on synthesized active inductors
Yan-Xiao Zhao(赵彦晓), Wan-Rong Zhang(张万荣), Xin Huang(黄鑫), Hong-Yun Xie(谢红云), Dong-Yue Jin(金冬月), Qiang Fu(付强)
School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
Effect of lateral structure parameters of SiGe HBTs on synthesized active inductors
Yan-Xiao Zhao(赵彦晓), Wan-Rong Zhang(张万荣), Xin Huang(黄鑫), Hong-Yun Xie(谢红云), Dong-Yue Jin(金冬月), Qiang Fu(付强)
School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

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