Chin. Phys. B
中国物理B  2016, Vol. 25 Issue (3): 038503    DOI: 10.1088/1674-1056/25/3/038503
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature
Liuan Li(李柳暗), Jiaqi Zhang(张家琦), Yang Liu(刘扬), Jin-Ping Ao(敖金平)
1. School of Microelectronics, Sun Yat-Sen University, Guangzhou 510275, China;
2. Institute of Technology and Science, Tokushima University, Tokushima 770-8506, Japan
Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature
Liuan Li(李柳暗)1, Jiaqi Zhang(张家琦)2, Yang Liu(刘扬)1, Jin-Ping Ao(敖金平)2
1. School of Microelectronics, Sun Yat-Sen University, Guangzhou 510275, China;
2. Institute of Technology and Science, Tokushima University, Tokushima 770-8506, Japan

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