Chin. Phys. B
中国物理B  2016, Vol. 25 Issue (3): 038504    DOI: 10.1088/1674-1056/25/3/038504
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
Mobility enhancement of strained GaSb p-channel metal—oxide—semiconductor field-effect transistorswith biaxial compressive strain
Yan-Wen Chen(陈燕文), Zhen Tan(谭桢), Lian-Feng Zhao(赵连锋), Jing Wang(王敬), Yi-Zhou Liu(刘易周),Chen Si(司晨), Fang Yuan(袁方), Wen-Hui Duan(段文晖), Jun Xu(许军)
1. Department of Physics, Tsinghua University, Beijing 100084, China;
2. Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China;
3. Department of Electrical Engineering, Princeton University, Princeton, Princeton, NJ 08544, USA;
4. School of Materials Science and Engineering, Beihang University, Beijing 100191, China
Mobility enhancement of strained GaSb p-channel metal—oxide—semiconductor field-effect transistorswith biaxial compressive strain
Yan-Wen Chen(陈燕文)1, Zhen Tan(谭桢)2, Lian-Feng Zhao(赵连锋)2,3, Jing Wang(王敬)2, Yi-Zhou Liu(刘易周)1,Chen Si(司晨)4, Fang Yuan(袁方)2, Wen-Hui Duan(段文晖)1, Jun Xu(许军)2
1. Department of Physics, Tsinghua University, Beijing 100084, China;
2. Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China;
3. Department of Electrical Engineering, Princeton University, Princeton, Princeton, NJ 08544, USA;
4. School of Materials Science and Engineering, Beihang University, Beijing 100191, China

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