Chin. Phys. B
中国物理B  2016, Vol. 25 Issue (2): 027306    DOI: 10.1088/1674-1056/25/2/027306
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
A uniform doping ultra-thin SOI LDMOS with accumulation-mode extended gate and back-side etching technology
Yan-Hui Zhang(张彦辉), Jie Wei(魏杰), Chao Yin(尹超), Qiao Tan(谭桥), Jian-Ping Liu(刘建平), Peng-Cheng Li(李鹏程), Xiao-Rong Luo(罗小蓉)
1. State Key Laboratory of Electronic Thin Films and Integrated Devices. University of Electronic Science and Technology of China, Chengdu 610054, China;
2. Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China
A uniform doping ultra-thin SOI LDMOS with accumulation-mode extended gate and back-side etching technology
Yan-Hui Zhang(张彦辉)1, Jie Wei(魏杰)1, Chao Yin(尹超)1, Qiao Tan(谭桥)1, Jian-Ping Liu(刘建平)1, Peng-Cheng Li(李鹏程)1, Xiao-Rong Luo(罗小蓉)1,2
1. State Key Laboratory of Electronic Thin Films and Integrated Devices. University of Electronic Science and Technology of China, Chengdu 610054, China;
2. Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China

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