Chin. Phys. B
中国物理B  2016, Vol. 25 Issue (2): 027305    DOI: 10.1088/1674-1056/25/2/027305
SPECIAL TOPIC --- Non-equilibrium phenomena in soft matters 最新目录| 下期目录| 过刊浏览| 高级检索 |
Modeling of a triple reduced surface field silicon-on-insulator lateral double-diffused metal-oxide-semiconductor field-effect transistor with low on-state resistance
Yu-Ru Wang(王裕如), Yi-He Liu(刘祎鹤), Zhao-Jiang Lin(林兆江), Dong Fang(方冬), Cheng-Zhou Li(李成州), Ming Qiao(乔明), Bo Zhang(张波)
1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China;
2. Institute of Electronic and Information Engineering in Dongguan, UESTC, Dongguan 523808, China
Modeling of a triple reduced surface field silicon-on-insulator lateral double-diffused metal-oxide-semiconductor field-effect transistor with low on-state resistance
Yu-Ru Wang(王裕如)1, Yi-He Liu(刘祎鹤)1, Zhao-Jiang Lin(林兆江)1, Dong Fang(方冬)1, Cheng-Zhou Li(李成州)1, Ming Qiao(乔明)1,2, Bo Zhang(张波)1
1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China;
2. Institute of Electronic and Information Engineering in Dongguan, UESTC, Dongguan 523808, China

Copyright © the Chinese Physical Society
Address:Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn