Chin. Phys. B
中国物理B  2016, Vol. 25 Issue (2): 027304    DOI: 10.1088/1674-1056/25/2/027304
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co2MnSi/graphene/n-Ge junction
Gui-fang Li(李桂芳), Jing Hu(胡晶), Hui Lv(吕辉), Zhijun Cui(崔智军), Xiaowei Hou(候晓伟), Shibin Liu(刘诗斌), Yongqian Du(杜永乾)
School of Electronics and Information, Northwestern Polytechnical University, Xi'an 710072, China
Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co2MnSi/graphene/n-Ge junction
Gui-fang Li(李桂芳), Jing Hu(胡晶), Hui Lv(吕辉), Zhijun Cui(崔智军), Xiaowei Hou(候晓伟), Shibin Liu(刘诗斌), Yongqian Du(杜永乾)
School of Electronics and Information, Northwestern Polytechnical University, Xi'an 710072, China

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