Chin. Phys. B
中国物理B  2016, Vol. 25 Issue (1): 017303    DOI: 10.1088/1674-1056/25/1/017303
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Reverse blocking characteristics and mechanisms in Schottky-drainAlGaN/GaN HEMT with a drain field plate and floating field plates
Wei Mao(毛维), Wei-Bo She(佘伟波), Cui Yang(杨翠), Jin-Feng Zhang(张金风), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Yue Hao(郝跃)
1. Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2. School of Physics and Optoelectronic Engineering, Xidian University, Xi'an 710071, China
Reverse blocking characteristics and mechanisms in Schottky-drainAlGaN/GaN HEMT with a drain field plate and floating field plates
Wei Mao(毛维)1, Wei-Bo She(佘伟波)1, Cui Yang(杨翠)2, Jin-Feng Zhang(张金风)1, Xue-Feng Zheng(郑雪峰)1, Chong Wang(王冲)1, Yue Hao(郝跃)1
1. Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2. School of Physics and Optoelectronic Engineering, Xidian University, Xi'an 710071, China

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