Chin. Phys. B
中国物理B  2015, Vol. 24 Issue (10): 108503    DOI: 10.1088/1674-1056/24/10/108503
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
A novel diode string triggered gated-PiN junction device for electrostatic discharge protection in 65-nm CMOS technology
张立忠, 王源, 陆光易, 曹健, 张兴
Institute of Microelectronics, Peking University, Beijing 100871, China
A novel diode string triggered gated-PiN junction device for electrostatic discharge protection in 65-nm CMOS technology
Zhang Li-Zhong, Wang Yuan, Lu Guang-Yi, Cao Jian, Zhang Xing
Institute of Microelectronics, Peking University, Beijing 100871, China

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