Chin. Phys. B
中国物理B  2015, Vol. 24 Issue (10): 108502    DOI: 10.1088/1674-1056/24/10/108502
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
An improved GGNMOS triggered SCR for high holding voltage ESD protection applications
张帅a, 董树荣b, 吴晓京a, 曾杰b, 钟雷b, 吴健b
a Department of Materials Science, Fudan University, Shanghai 200433, China;
b Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
An improved GGNMOS triggered SCR for high holding voltage ESD protection applications
Zhang Shuaia, Dong Shu-Rongb, Wu Xiao-Jinga, Zeng Jieb, Zhong Leib, Wu Jianb
a Department of Materials Science, Fudan University, Shanghai 200433, China;
b Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China

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