Chin. Phys. B
中国物理B  2015, Vol. 24 Issue (8): 088501    DOI: 10.1088/1674-1056/24/8/088501
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
Effects of back gate bias on radio-frequency performance in partially depleted silicon-on-inslator nMOSFETs
吕凯, 陈静, 罗杰馨, 何伟伟, 黄建强, 柴展, 王曦
Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
Effects of back gate bias on radio-frequency performance in partially depleted silicon-on-inslator nMOSFETs
Lü Kai, Chen Jing, Luo Jie-Xin, He Wei-Wei, Huang Jian-Qiang, Chai Zhan, Wang Xi
Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

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