Chin. Phys. B
中国物理B  2015, Vol. 24 Issue (8): 087306    DOI: 10.1088/1674-1056/24/8/087306
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor
吕元杰a, 冯志红a, 顾国栋a, 尹甲运a, 房玉龙a, 王元刚a, 谭鑫a, 周幸叶a, 林兆军b, 冀子武b, 蔡树军a
a National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
b School of Physics, Shandong University, Jinan 250100, China
Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor
Lv Yuan-Jiea, Feng Zhi-Honga, Gu Guo-Donga, Yin Jia-Yuna, Fang Yu-Longa, Wang Yuan-Ganga, Tan Xina, Zhou Xing-Yea, Lin Zhao-Junb, Ji Zi-Wub, Cai Shu-Juna
a National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
b School of Physics, Shandong University, Jinan 250100, China

Copyright © the Chinese Physical Society
Address:Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn