Chin. Phys. B
中国物理B  2015, Vol. 24 Issue (7): 077201    DOI: 10.1088/1674-1056/24/7/077201
SPECIAL TOPIC --- Non-equilibrium phenomena in soft matters 最新目录| 下期目录| 过刊浏览| 高级检索 |
High performance trench MOS barrier Schottky diode with high-k gate oxide
翟东媛a b, 朱俊b, 赵毅a c, 蔡银飞d, 施毅b, 郑有炓b
a Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China;
b School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
c State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China;
d Hangzhou QP Chip Technology Co. Ltd, Hangzhou 311121, China
High performance trench MOS barrier Schottky diode with high-k gate oxide
Zhai Dong-Yuana b, Zhu Junb, Zhao Yia c, Cai Yin-Feid, Shi Yib, Zheng You-Liaob
a Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China;
b School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
c State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China;
d Hangzhou QP Chip Technology Co. Ltd, Hangzhou 311121, China

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