Chin. Phys. B
中国物理B  2015, Vol. 24 Issue (6): 068502    DOI: 10.1088/1674-1056/24/6/068502
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
Non-ideal effect in 4H—SiC bipolar junction transistor with double Gaussian-doped base
元磊a, 张玉明a, 宋庆文a b, 汤晓燕a, 张义门a
a Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
b School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China
Non-ideal effect in 4H—SiC bipolar junction transistor with double Gaussian-doped base
Yuan Leia, Zhang Yu-Minga, Song Qing-Wena b, Tang Xiao-Yana, Zhang Yi-Mena
a Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
b School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China

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