Chin. Phys. B
  2014, Vol. 23 Issue (12): 126101    DOI: 10.1088/1674-1056/23/12/126101
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Bipolar tri-state resistive switching characteristics in Ti/CeOx/Pt memory device
M. Ismaila b, M. W. Abbasa, A. M. Ranaa, I. Taliba, E. Ahmeda, M. Y. Nadeema, T. L. Tsaib, U. Chandb, N. A. Shahc, M. Hussaind, A. Aziza, M. T. Bhattia
a Department of Physics, Bahauddin Zakariya University, Multan-60800, Pakistan;
b Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan, China;
c Thin Films Technology Research Laboratory, Department of Physics, COMSATS Institute of Information Technology, Islamabad-45320, Pakistan;
d Center for High Energy Physics, University of Punjab, Lahore-54590, Pakistan
Bipolar tri-state resistive switching characteristics in Ti/CeOx/Pt memory device
M. Ismaila b, M. W. Abbasa, A. M. Ranaa, I. Taliba, E. Ahmeda, M. Y. Nadeema, T. L. Tsaib, U. Chandb, N. A. Shahc, M. Hussaind, A. Aziza, M. T. Bhattia
a Department of Physics, Bahauddin Zakariya University, Multan-60800, Pakistan;
b Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan, China;
c Thin Films Technology Research Laboratory, Department of Physics, COMSATS Institute of Information Technology, Islamabad-45320, Pakistan;
d Center for High Energy Physics, University of Punjab, Lahore-54590, Pakistan

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