Chin. Phys. B
  2014, Vol. 23 Issue (10): 107101    DOI: 10.1088/1674-1056/23/10/107101
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Low-resistance Ohmic contact on polarization-dopedAlGaN/GaN heterojunction
李世彬a, 余宏萍a, 张婷a, 陈志a b, 吴志明a
a State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China;
b Department of Electrical & Computer Engineering, University of Kentucky, Lexington, KY 40506, USA
Low-resistance Ohmic contact on polarization-dopedAlGaN/GaN heterojunction
Li Shi-Bina, Yu Hong-Pinga, Zhang Tinga, Chen Zhia b, Wu Zhi-Minga
a State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China;
b Department of Electrical & Computer Engineering, University of Kentucky, Lexington, KY 40506, USA

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