Chin. Phys. B
  2014, Vol. 23 Issue (9): 090702    DOI: 10.1088/1674-1056/23/9/090702
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Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs
彭超a, 胡志远a, 宁冰旭a, 黄辉祥a, 樊双a, 张正选a, 毕大炜a, 恩云飞b
a State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
b Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, Guangzhou 510610, China
Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs
Peng Chaoa, Hu Zhi-Yuana, Ning Bing-Xua, Huang Hui-Xianga, Fan Shuanga, Zhang Zheng-Xuana, Bi Da-Weia, En Yun-Feib
a State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
b Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, Guangzhou 510610, China

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