Chin. Phys. B
  2014, Vol. 23 Issue (9): 097308    DOI: 10.1088/1674-1056/23/9/097308
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Breakdown characteristics of AlGaN/GaN Schottky barrier diodes fabricated on a silicon substrate
蒋超, 陆海, 陈敦军, 任芳芳, 张荣, 郑有炓
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
Breakdown characteristics of AlGaN/GaN Schottky barrier diodes fabricated on a silicon substrate
Jiang Chao, Lu Hai, Chen Dun-Jun, Ren Fang-Fang, Zhang Rong, Zheng You-Dou
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

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