Chin. Phys. B
中国物理B  2014, Vol. 23 Issue (8): 088502    DOI: 10.1088/1674-1056/23/8/088502
SPECIAL TOPI—International Conference on Nanoscience & Technology, China 2013 最新目录| 下期目录| 过刊浏览| 高级检索 |
Chemical mechanical planarization of Ge2Sb2Te5 using IC1010 and Politex reg pads in acidic slurry
何敖东a b, 刘波a, 宋志棠a, 王良咏a, 刘卫丽a, 冯高明c, 封松林a
a State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
b University of Chinese Academy of Sciences, Beijing 100049, China;
c Semiconductor Manufacturing International Corporation, 18 Zhangjiang Road, Pudong, Shanghai 201203, China
Chemical mechanical planarization of Ge2Sb2Te5 using IC1010 and Politex reg pads in acidic slurry
He Ao-Donga b, Liu Boa, Song Zhi-Tanga, Wang Liang-Yonga, Liu Wei-Lia, Feng Gao-Mingc, Feng Song-Lina
a State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
b University of Chinese Academy of Sciences, Beijing 100049, China;
c Semiconductor Manufacturing International Corporation, 18 Zhangjiang Road, Pudong, Shanghai 201203, China

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