Chin. Phys. B
  2014, Vol. 23 Issue (8): 087305    DOI: 10.1088/1674-1056/23/8/087305
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor
毛维a, 佘伟波a, 杨翠b, 张超a, 张进成a, 马晓华b, 张金风a, 刘红侠a, 杨林安a, 张凯a, 赵胜雷a, 陈永和a, 郑雪峰a, 郝跃a
a Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
b School of Physics and Optoelectronic Engineering, Xidian University, Xi'an 710071, China
A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor
Mao Weia, She Wei-Boa, Yang Cuib, Zhang Chaoa, Zhang Jin-Chenga, Ma Xiao-Huab, Zhang Jin-Fenga, Liu Hong-Xiaa, Yang Lin-Ana, Zhang Kaia, Zhao Sheng-Leia, Chen Yong-Hea, Zheng Xue-Fenga, Hao Yuea
a Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
b School of Physics and Optoelectronic Engineering, Xidian University, Xi'an 710071, China

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