Chin. Phys. B
  2014, Vol. 23 Issue (7): 077304    DOI: 10.1088/1674-1056/23/7/077304
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage
宓珉瀚, 张凯, 陈兴, 赵胜雷, 王冲, 张进成, 马晓华, 郝跃
Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage
Mi Min-Han, Zhang Kai, Chen Xing, Zhao Sheng-Lei, Wang Chong, Zhang Jin-Cheng, Ma Xiao-Hua, Hao Yue
Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

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