Chin. Phys. B
  2014, Vol. 23 Issue (7): 077105    DOI: 10.1088/1674-1056/23/7/077105
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
吕元杰a, 冯志红a, 林兆军b, 郭红雨a, 顾国栋a, 尹甲运a, 王元刚a, 徐鹏a, 宋旭波a, 蔡树军a
a National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
b School of Physics, Shandong University, Jinan 250100, China
Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
Lü Yuan-Jiea, Feng Zhi-Honga, Lin Zhao-Junb, Guo Hong-Yua, Gu Guo-Donga, Yin Jia-Yuna, Wang Yuan-Ganga, Xu Penga, Song Xu-Boa, Cai Shu-Juna
a National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
b School of Physics, Shandong University, Jinan 250100, China

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