Chin. Phys. B
  2014, Vol. 23 Issue (7): 077201    DOI: 10.1088/1674-1056/23/7/077201
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Design consideration and fabrication of 1.2-kV 4H-SiC trenched-and-implanted vertical junction field-effect transistors
陈思哲, 盛况
College of Electrical Engineering, Zhejiang University, Hangzhou 310007, China
Design consideration and fabrication of 1.2-kV 4H-SiC trenched-and-implanted vertical junction field-effect transistors
Chen Si-Zhe, Sheng Kuang
College of Electrical Engineering, Zhejiang University, Hangzhou 310007, China

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