Chin. Phys. B
中国物理B  2014, Vol. 23 Issue (6): 067701    DOI: 10.1088/1674-1056/23/6/067701
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Fabricating GeO2 passivation layer by N2O plasma oxidation for Ge NMOSFETs application
林猛, 安霞, 黎明, 云全新, 李敏, 李志强, 刘朋强, 张兴, 黄如
Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing 100871, China
Fabricating GeO2 passivation layer by N2O plasma oxidation for Ge NMOSFETs application
Lin Meng, An Xia, Li Ming, Yun Quan-Xin, Li Min, Li Zhi-Qiang, Liu Peng-Qiang, Zhang Xing, Huang Ru
Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing 100871, China

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