Chin. Phys. B
中国物理B  2014, Vol. 23 Issue (6): 068801    DOI: 10.1088/1674-1056/23/6/068801
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells
杨静a, 赵德刚a, 江德生a, 刘宗顺a, 陈平a, 李亮a, 吴亮亮a, 乐伶聪a, 李晓静a, 何晓光b, 王辉b, 朱建军b, 张书明b, 张宝顺b, 杨辉a b
a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells
Yang Jinga, Zhao De-Ganga, Jiang De-Shenga, Liu Zong-Shuna, Chen Pinga, Li Lianga, Wu Liang-Lianga, Le Ling-Conga, Li Xiao-Jinga, He Xiao-Guangb, Wang Huib, Zhu Jian-Junb, Zhang Shu-Mingb, Zhang Bao-Shunb, Yang Huia b
a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

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