Chin. Phys. B
中国物理B  2014, Vol. 23 Issue (6): 067101    DOI: 10.1088/1674-1056/23/6/067101
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Partial-SOI high voltage laterally double-diffused MOS with a partially buried n+-layer
胡盛东a b, 武星河a, 朱志a, 金晶晶a, 陈银晖a
a College of Communication Engineering, Chongqing University, Chongqing 400044, China;
b National Laboratory of Analogue Integrated Circuits, No. 24 Research Institute of China Electrics Technology Group Corporation, Chongqing 400044, China
Partial-SOI high voltage laterally double-diffused MOS with a partially buried n+-layer
Hu Sheng-Donga b, Wu Xing-Hea, Zhu Zhia, Jin Jing-Jinga, Chen Yin-Huia
a College of Communication Engineering, Chongqing University, Chongqing 400044, China;
b National Laboratory of Analogue Integrated Circuits, No. 24 Research Institute of China Electrics Technology Group Corporation, Chongqing 400044, China

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