Chin. Phys. B
中国物理B  2014, Vol. 23 Issue (5): 057102    DOI: 10.1088/1674-1056/23/5/057102
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination
袁昊a, 汤晓燕a, 张义门a, 张玉明a, 宋庆文b, 杨霏c, 吴昊c
a School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;
b School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
c The National Smart Grid Research Institute, Beijing 102200, China
4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination
Yuan Haoa, Tang Xiao-Yana, Zhang Yi-Mena, Zhang Yu-Minga, Song Qing-Wenb, Yang Feic, Wu Haoc
a School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;
b School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
c The National Smart Grid Research Institute, Beijing 102200, China

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