Chin. Phys. B
中国物理B  2014, Vol. 23 Issue (5): 057203    DOI: 10.1088/1674-1056/23/5/057203
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Experimental and numerical analyses of high voltage 4H-SiC junction barrier Schottky rectifiers with linearly graded field limiting ring
王向东a, 邓小川a, 王永维b, 王勇b, 文译a, 张波a
a State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
b National Key Laboratory of ASIC, Shijiazhuang 050051, China
Experimental and numerical analyses of high voltage 4H-SiC junction barrier Schottky rectifiers with linearly graded field limiting ring
Wang Xiang-Donga, Deng Xiao-Chuana, Wang Yong-Weib, Wang Yongb, Wen Yia, Zhang Boa
a State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
b National Key Laboratory of ASIC, Shijiazhuang 050051, China

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