Chin. Phys. B
中国物理B  2014, Vol. 23 Issue (4): 047201    DOI: 10.1088/1674-1056/23/4/047201
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Influence of the channel electric field distribution on the polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors
于英霞a, 林兆军a, 栾崇彪a, 吕元杰b, 冯志红b, 杨铭a, 王玉堂a
a School of Physics, Shandong University, Jinan 250100, China;
b Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
Influence of the channel electric field distribution on the polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors
Yu Ying-Xiaa, Lin Zhao-Juna, Luan Chong-Biaoa, Lü Yuan-Jieb, Feng Zhi-Hongb, Yang Minga, Wang Yu-Tanga
a School of Physics, Shandong University, Jinan 250100, China;
b Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

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