Chin. Phys. B
中国物理B  2014, Vol. 23 Issue (3): 038503    DOI: 10.1088/1674-1056/23/3/038503
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer
伍伟, 张波, 罗小蓉, 方健, 李肇基
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer
Wu Wei, Zhang Bo, Luo Xiao-Rong, Fang Jian, Li Zhao-Ji
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

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