Chin. Phys. B
中国物理B  2014, Vol. 23 Issue (3): 038405    DOI: 10.1088/1674-1056/23/3/038405
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
UV-ozone-treated MoO3 as the hole-collecting buffer layer for high-efficiency solution-processed SQ:PC71BM photovoltaic devices
杨倩倩a b, 杨道宾c, 赵谡玲a b, 黄艳c, 徐征a b, 龚伟a b, 樊星a b, 刘志方a b, 黄清雨a b, 徐叙瑢a b
a Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University), Ministry of Education, Beijing 100044, China;
b Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China;
c College of Chemistry, Sichuan University, Chengdu 610064, China
UV-ozone-treated MoO3 as the hole-collecting buffer layer for high-efficiency solution-processed SQ:PC71BM photovoltaic devices
Yang Qian-Qiana b, Yang Dao-Binc, Zhao Su-Linga b, Huang Yanc, Xu Zhenga b, Gong Weia b, Fan Xinga b, Liu Zhi-Fanga b, Huang Qing-Yua b, Xu Xu-Ronga b
a Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University), Ministry of Education, Beijing 100044, China;
b Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China;
c College of Chemistry, Sichuan University, Chengdu 610064, China

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