Chin. Phys. B
中国物理B  2014, Vol. 23 Issue (3): 038501    DOI: 10.1088/1674-1056/23/3/038501
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
100-nm T-gate InAlAs/InGaAs InP-based HEMTs with fT=249 GHz and fmax=415 GHz
汪丽丹, 丁芃, 苏永波, 陈娇, 张毕禅, 金智
Microware Devices and Integrated Circuits Department, Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
100-nm T-gate InAlAs/InGaAs InP-based HEMTs with fT=249 GHz and fmax=415 GHz
Wang Li-Dan, Ding Peng, Su Yong-Bo, Chen Jiao, Zhang Bi-Chan, Jin Zhi
Microware Devices and Integrated Circuits Department, Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

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