Chin. Phys. B
中国物理B  2014, Vol. 23 Issue (2): 028503    DOI: 10.1088/1674-1056/23/2/028503
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p–i–n avalanche photodiodes
李晓静a, 赵德刚a, 江德生a, 刘宗顺a, 陈平a, 吴亮亮a, 李亮a, 乐伶聪a, 杨静a, 何晓光a, 王辉b, 朱建军b, 张书明b, 张宝顺b, 杨辉a b
a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p–i–n avalanche photodiodes
Li Xiao-Jinga, Zhao De-Ganga, Jiang De-Shenga, Liu Zong-Shuna, Chen Pinga, Wu Liang-Lianga, Li Lianga, Le Ling-Conga, Yang Jinga, He Xiao-Guanga, Wang Huib, Zhu Jian-Junb, Zhang Shu-Mingb, Zhang Bao-Shunb, Yang Huia b
a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China

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