Chin. Phys. B
中国物理B  2014, Vol. 23 Issue (2): 027101    DOI: 10.1088/1674-1056/23/2/027101
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes
吕元杰a, 冯志红a, 林兆军b, 顾国栋a, 敦少博a, 尹甲运a, 韩婷婷a, 蔡树军a
a Science and Technology on Application-Specific Integrated Circuit Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
b School of Physics, Shandong University, Jinan 250100, China
Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes
Lü Yuan-Jiea, Feng Zhi-Honga, Lin Zhao-Junb, Gu Guo-Donga, Dun Shao-Boa, Yin Jia-Yuna, Han Ting-Tinga, Cai Shu-Juna
a Science and Technology on Application-Specific Integrated Circuit Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
b School of Physics, Shandong University, Jinan 250100, China

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