Chin. Phys. B
Chin. Phys. B  2014, Vol. 23 Issue (1): 018501    DOI: 10.1088/1674-1056/23/1/018501
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate
李聪, 庄奕琪, 张丽, 靳刚
School of Microelectronics, Xidian University, Xi’an 710071, China
Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate
Li Cong, Zhuang Yi-Qi, Zhang Li, Jin Gang
School of Microelectronics, Xidian University, Xi’an 710071, China

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