Chin. Phys. B
中国物理B  2013, Vol. 22 Issue (10): 107104    DOI: 10.1088/1674-1056/22/10/107104
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
The effects of strain and surface roughness scattering on the quasi-ballistic characteristics of a Ge nanowire p-channel field-effect transistor
秦洁宇a b, 杜刚b, 刘晓彦b
a Shenzhen Graduate School, Peking University, Shenzhen 518055, China;
b Institute of Microelectronics, Peking University, Beijing 100871, China
The effects of strain and surface roughness scattering on the quasi-ballistic characteristics of a Ge nanowire p-channel field-effect transistor
Qin Jie-Yua b, Du Gangb, Liu Xiao-Yanb
a Shenzhen Graduate School, Peking University, Shenzhen 518055, China;
b Institute of Microelectronics, Peking University, Beijing 100871, China

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