Chin. Phys. B
中国物理B  2013, Vol. 22 Issue (9): 098504    DOI: 10.1088/1674-1056/22/9/098504
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers
王幸福, 童金辉, 赵璧君, 陈鑫, 任志伟, 李丹伟, 卓祥景, 章俊, 易翰翔, 李述体
Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China
Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers
Wang Xing-Fu, Tong Jin-Hui, Zhao Bi-Jun, Chen Xin, Ren Zhi-Wei, Li Dan-Wei, Zhuo Xiang-Jing, Zhang Jun, Yi Han-Xiang, Li Shu-Ti
Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China

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