Chin. Phys. B
中国物理B  2013, Vol. 22 Issue (9): 098502    DOI: 10.1088/1674-1056/22/9/098502
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Tight-binding study of quantum transport in nanoscale GaAs Schottky MOSFET
Zahra Ahangaria, Morteza Fathipourb
a Department of Electrical Engineering, Science and Research Branch, Islamic Azad University, Tehran, Iran;
b School of Electrical and Computer Engineering, University of Tehran, Tehran, Iran
Tight-binding study of quantum transport in nanoscale GaAs Schottky MOSFET
Zahra Ahangaria, Morteza Fathipourb
a Department of Electrical Engineering, Science and Research Branch, Islamic Azad University, Tehran, Iran;
b School of Electrical and Computer Engineering, University of Tehran, Tehran, Iran

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