Chin. Phys. B
中国物理B  2013, Vol. 22 Issue (9): 097701    DOI: 10.1088/1674-1056/22/9/097701
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Performance improvement of charge trap flash memory by using a composition-modulated high-k trapping layer
汤振杰a, 李荣b, 殷江c
a College of Physics and Electronic Engineering, Anyang Normal University, Anyang 455000, China;
b School of Mathematics and Statistics, Anyang Normal University, Anyang 455000, China;
c Department of Materials Science and Engineering, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
Performance improvement of charge trap flash memory by using a composition-modulated high-k trapping layer
Tang Zhen-Jiea, Li Rongb, Yin Jiangc
a College of Physics and Electronic Engineering, Anyang Normal University, Anyang 455000, China;
b School of Mathematics and Statistics, Anyang Normal University, Anyang 455000, China;
c Department of Materials Science and Engineering, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China

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