Chin. Phys. B
中国物理B  2013, Vol. 22 Issue (9): 097301    DOI: 10.1088/1674-1056/22/9/097301
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Improved interface properties of an HfO2 gate dielectric GaAs MOS device by using SiNx as an interfacial passivation layer
朱述炎a, 徐静平a, 汪礼胜a b, 黄苑a
a School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;
b Department of Physics Science and Technology, Wuhan University of Technology, Wuhan 430070, China
Improved interface properties of an HfO2 gate dielectric GaAs MOS device by using SiNx as an interfacial passivation layer
Zhu Shu-Yana, Xu Jing-Pinga, Wang Li-Shenga b, Huang Yuana
a School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;
b Department of Physics Science and Technology, Wuhan University of Technology, Wuhan 430070, China

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