Chin. Phys. B
中国物理B  2013, Vol. 22 Issue (9): 097201    DOI: 10.1088/1674-1056/22/9/097201
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
A novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain
邓永辉, 谢刚, 汪涛, 盛况
College of Electrical Engineering, Zhejiang University, Hangzhou 310007, China
A novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain
Deng Yong-Hui, Xie Gang, Wang Tao, Sheng Kuang
College of Electrical Engineering, Zhejiang University, Hangzhou 310007, China

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