Chin. Phys. B
中国物理B  2013, Vol. 22 Issue (9): 097101    DOI: 10.1088/1674-1056/22/9/097101
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Modeling of conducting bridge evolution in bipolar vanadium oxide-based resistive switching memory
张楷亮a, 刘凯a, 王芳a b, 尹富红a, 韦晓莹b, 赵金石a
a School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384, China;
b School of Electronics Information Engineering, Tianjin University, Tianjin 300072, China
Modeling of conducting bridge evolution in bipolar vanadium oxide-based resistive switching memory
Zhang Kai-Lianga, Liu Kaia, Wang Fanga b, Yin Fu-Honga, Wei Xiao-Yingb, Zhao Jin-Shia
a School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384, China;
b School of Electronics Information Engineering, Tianjin University, Tianjin 300072, China

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