Chin. Phys. B
中国物理B  2013, Vol. 22 Issue (8): 088503    DOI: 10.1088/1674-1056/22/8/088503
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
Performance improvement of blue InGaN light-emitting diodes with a specially designed n-AlGaN hole blocking layer
丁彬彬a b, 赵芳a b, 宋晶晶a b, 熊建勇a b, 郑树文a b, 张运炎a b, 许毅钦a b, 周德涛a b, 喻晓鹏a b, 张瀚翔a b, 张涛a b, 范广涵a b
a Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
b Laboratory of Nanophotonic Functional Materials and Device, South China Normal University, Guangzhou 510631, China
Performance improvement of blue InGaN light-emitting diodes with a specially designed n-AlGaN hole blocking layer
Ding Bin-Bina b, Zhao Fanga b, Song Jing-Jinga b, Xiong Jian-Yonga b, Zheng Shu-Wena b, Zhang Yun-Yana b, Xu Yi-Qina b, Zhou De-Taoa b, Yu Xiao-Penga b, Zhang Han-Xianga b, Zhang Taoa b, Fan Guang-Hana b
a Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
b Laboratory of Nanophotonic Functional Materials and Device, South China Normal University, Guangzhou 510631, China

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