Chin. Phys. B
中国物理B  2013, Vol. 22 Issue (6): 067203    DOI: 10.1088/1674-1056/22/6/067203
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor
于英霞a, 林兆军a, 栾崇彪a, 王玉堂a, 陈弘b, 王占国c
a School of Physics, Shandong University, Jinan 250100, China;
b Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
c Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor
Yu Ying-Xiaa, Lin Zhao-Juna, Luan Chong-Biaoa, Wang Yu-Tanga, Chen Hongb, Wang Zhan-Guoc
a School of Physics, Shandong University, Jinan 250100, China;
b Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
c Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

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