Chin. Phys. B
中国物理B  2013, Vol. 22 Issue (7): 078102    DOI: 10.1088/1674-1056/22/7/078102
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
Influences of high-temperature annealing on atomic layer deposited Al2O3/4H-SiC
王弋宇a, 申华军a, 白云a, 汤益丹a, 刘可安b, 李诚瞻b, 刘新宇a
a Department of Microwave Device and Integrated Circuit, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, Chinal;
b Zhuzhou CSR Times Electric Co. Ltd., Zhuzhou 412001, China
Influences of high-temperature annealing on atomic layer deposited Al2O3/4H-SiC
Wang Yi-Yua, Shen Hua-Juna, Bai Yuna, Tang Yi-Dana, Liu Ke-Anb, Li Cheng-Zhanb, Liu Xin-Yua
a Department of Microwave Device and Integrated Circuit, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, Chinal;
b Zhuzhou CSR Times Electric Co. Ltd., Zhuzhou 412001, China

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