Chin. Phys. B
中国物理B  2013, Vol. 22 Issue (7): 077306    DOI: 10.1088/1674-1056/22/7/077306
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Effect of Si-doped In0.49Ga0.51P barrier layer on the device performance of In0.4Ga0.6As MOSFETs grown onsemi-insulating GaAs substrate
常虎东, 孙兵, 薛百清, 刘桂明, 赵威, 王盛凯, 刘洪刚
Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Effect of Si-doped In0.49Ga0.51P barrier layer on the device performance of In0.4Ga0.6As MOSFETs grown onsemi-insulating GaAs substrate
Chang Hu-Dong, Sun Bing, Xue Bai-Qing, Liu Gui-Ming, Zhao Wei, Wang Sheng-Kai, Liu Hong-Gang
Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

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