Chin. Phys. B
中国物理B  2013, Vol. 22 Issue (6): 068802    DOI: 10.1088/1674-1056/22/6/068802
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
The effects of InGaN layer thickness on the performance of InGaN/GaN p-i-n solar cells
李亮, 赵德刚, 江德生, 刘宗顺, 陈平, 吴亮亮, 乐伶聪, 王辉, 杨辉
a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
The effects of InGaN layer thickness on the performance of InGaN/GaN p-i-n solar cells
Li Liang, Zhao De-Gang, Jiang De-Sheng, Liu Zong-Shun, Chen Ping, Wu Liang-Liang, Le Ling-Cong, Wang Hui, Yang Hui
a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China

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